Deep Meta Q-Learning based Multi-Task Offloading in Edge-Cloud Systems

Resource-Constrained Edge Devices Can Not Efficiently Handle the Explosive Growth of Mobile Data and the Increasing Computational Demand of Modern-Day User Applications. Task Offloading Allows the Migration of Complex Tasks from User Devices to the Remote Edge-Cloud Servers Thereby Reducing their Computational Burden and Energy Consumption While Also Improving the Efficiency of Task Processing. However, Obtaining the Optimal Offloading Strategy in a Multi-Task Offloading Decision-Making Process is an NP-Hard Problem. Existing Deep Learning Techniques with Slow Learning Rates and Weak Adaptability Are Not Suitable for Dynamic Multi-User Scenarios. in This Article, We Propose a Novel Deep Meta-Reinforcement Learning-Based Approach to the Multi-Task Offloading Problem using a Combination of First-Order Meta-Learning and Deep Q-Learning Methods. We Establish the Meta-Generalization Bounds for the Proposed Algorithm and Demonstrate that It Can Reduce the Time and Energy Consumption of IoT Applications by Up to 15%. through Rigorous Simulations, We Show that Our Method Achieves Near-Optimal Offloading Solutions While Also Being Able to Adapt to Dynamic Edge-Cloud Environments

Collisionless Pattern Discovery in Robot Swarms Using Deep Reinforcement Learning

We present a deep reinforcement learning-based framework for automatically discovering patterns available in any given initial configuration of fat robot swarms. In particular, we model the problem of collision-less gathering and mutual visibility in fat robot swarms and discover patterns for solving them using our framework. We show that by shaping reward signals based on certain constraints like mutual visibility and safe proximity, the robots can discover collision-less trajectories leading to well-formed gathering and visibility patterns

Thermal and structural investigations of x Li2 O-(1?x)Bi2 O3 (0.25 ? x ? 0.35) glasses

In this paper, we have studied the nonisothermal and isothermal crystallization kinetics of xLi2O-(1?x)Bi2O3 (0.25 ? x ? 0.35) glasses, using differential scanning calorimetry. Both the energies of glass transition and crystallization are estimated, using the Ozawa and Kissinger methods for nonisothermal crystallization. The modified Johnson-Mehl-Avrami (JMA) equation is used to estimate the nature of nucleation and crystal growth during the nonisothermal crystallization. The nature of nucleation and crystal growth is also determined by the Sestak-Berggren model for the non-isothermal crystallization. On the other hand, the JMA equation describes the diffusion controlled growth of crystallites for isothermal crystallization. Nature of crystal growth is identified by scanning electron micrographs both non-isothermally and isothermally. In situ low frequency Raman spectra are analyzed to determine the degree of amorphous nature below onset of crystallization temperature for the glasses. Transition from local ordering to high range ordering of BiO6 octahedral units after crystallization is also identified, using Raman susceptibility spectra

Transport properties of iron-bismuthate glassy semiconductors

Iron-bismuthate glassy semiconductors were prepared in a range of compositions and their electrical transport properties were measured in the temperature range of 100-500 K. The electrical data were analyzed in the light of the models of polaronic hopping conduction. The analysis showed that the high-temperature conductivity was well explained by the polaronic models. But these models failed to account for the decrease of the activation energy with the decrease of temperature. At lower temperatures, a variable range analysis was made. This analysis provided reasonable values of the decay constant for the localized states and also for the density of states at the Fermi level

Memory switching in bismuth-vanadate glasses

The electrical V-I characteristics of thin blown films of V2O5-Bi2O3 glasses with 95-70 mol % V2O5 were studied in the temperature range 200-400 K. It was observed that at lower fields, the bulk resistance controlled the current. At higher fields, all the glass compositions showed memory switching characteristics. The decrease in the threshold voltage and increase in the threshold current with the increase of V2O5 content in the glasses and also with increasing temperature were observed. The switching action was associated with a phase transition from a disordered glassy state to an ordered devitrified state due to self-heating. The ideal thermal model was shown to be applicable to the present glasses

Polaronic transport in iron-vanadate glassy semiconductors

Measurements are reported of the electrical conductivity of iron vanadate glassy semiconductors over the temperature range 80-450 K. The data is analysed in the light of existing theoretical models of polaronic hopping conductions. The high-temperature behaviour is consistent with phonon-assisted hopping of polarons in the adiabatic regime. Variable-range hopping accounts for the temperature dependence of the electrical conductivity at lower temperatures. Application of the polaronic model to the experimental data provides reasonable values of the polaron radius, the wavefunction localization length and denstiy of states at the Fermi level

AC conduction in iron bismuthate glassy semiconductors

The first measurements are reported for the frequency-dependent ac conductivity for the iron bismuthate glassy semiconductors in the frequency range 102-105 Hz and in the temperature range 80-450 K. The experimental data have been analyzed with reference to various theoretical models based on quantum-mechanical tunneling through the barrier and classical hopping over the barrier. The analysis shows that the correlated-barrier-hopping model is the most appropriate for the material under consideration. This model predicts quantitatively the temperature dependence of both the ac conductivity and its frequency exponent. However, other models, such as the quantum-mechanical tunneling model, are consistent with the low-temperature ac conductivity, but completely fail to interpret the observed temperature dependence of the frequency exponent. Similarly, the overlapping-large-polaron tunneling model can explain the temperature dependence of the frequency exponent at low temperature, although this model predicts the temperature dependence of the ac conductivity to be much higher than what the experimental data show

Transport properties of vanadium germanate glassy semiconductors

Measurements are reported for the dc as well as frequency-dependent (ac) conductivities (real and imaginary parts) for various compositions of the vanadium germanate glassy semiconductors in the temperature range 80-450 K. The experimental results are analyzed with reference to various theoretical models proposed for electrical conduction in amorphous semiconductors. The analysis shows that at high temperatures the temperature dependence of the dc conductivity is consistent with Mott's model of phonon-assisted polaronic hopping conduction in the adiabatic approximation, while the variable-range-hopping mechanism dominates at lower temperatures. Schnakenberg's model predicts the temperature dependence of the observed activation energy in the intermediate temperature range. The temperature dependence of the ac conductivity is consistent with the simple quantum-mechanical tunneling model at lower temperatures, although this model cannot predict the observed temperature dependence of the frequency exponent. The overlapping-large-polaron tunneling model can explain the temperature dependence of the frequency exponent at low temperature; however, this model predicts a temperature dependence of the ac conductivity much higher than the observed data show. On the other hand, the correlated-barrier-hopping model is consistent with the temperature dependence of both the ac conductivity and its frequency exponent over the entire temperature range of measurements

Temperature-dependent thermoelectric power of semiconducting bismuth-vanadate glass

The temperature dependence of the thermoelectric power of the semiconducting bismuth-vanadate glasses was presented in a range of compositions. The high-temperature thermoelectric power was satisfactorily explained by Heikes'relation [R. R. Heikes and R. W. Ure, Eds., Thermoelectricity (Interscience, New York, 1961), p. 81]. The thermoelectric power data also showed evidence of small polaron formation in the glass and revealed that the disorder energy happened to increase with the increase of V2O5 content in the glass. An estimate of the disorder energy was made from the low-temperature thermoelectric power data

Electrical transport properties of molybdenum tellurite glassy semiconductors

The first measurements are reported of the electrical conductivity of semiconducting molybdenum tellurite glasses of various compositions over the temperature range 100-500 K. The electrical data have been analysed in the light of polaronic conduction models. The analysis shows that the adiabatic hopping theory is most appropriate for describing the polaronic conduction in the high-temperature region. However, in the intermediate temperature range, variable-range hopping dominates. It is shown that the glass-forming oxide, rather than the transition-metal oxide, greatly affects the conduction mechanism